| 发明名称 |
INTEGRATED CIRCUITS HAVING SMOOTH METAL GATES AND METHODS FOR FABRICATING SAME |
| 摘要 |
Integrated circuits with smooth metal gates and methods for fabricating integrated circuits with smooth metal gates are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a partially fabricated integrated circuit including a dielectric layer formed with a trench bound by a trench surface. The method deposits metal in the trench and forms an overburden portion of metal overlying the dielectric layer. The method includes selectively etching the metal with a chemical etchant and removing the overburden portion of metal. |
| 申请公布号 |
US2015076624(A1) |
申请公布日期 |
2015.03.19 |
| 申请号 |
US201314031839 |
申请日期 |
2013.09.19 |
| 申请人 |
GLOBALFOUNDRIES, Inc. |
发明人 |
Liu Huang;Yu Jialin;Xia Jilin |
| 分类号 |
H01L21/28;H01L29/49;H01L21/3213;H01L21/285;H01L21/321 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating an integrated circuit, the method comprising:
providing a partially fabricated integrated circuit including a dielectric layer formed with a trench bound by a trench surface; depositing metal in the trench and forming an overburden portion of metal overlying the dielectric layer; and selectively etching the metal with a chemical etchant and removing the overburden portion of metal. |
| 地址 |
Grand Cayman KY |
