| 摘要 |
The present invention relates to an atomic layer deposition device having a scan-type reactor, the device comprising multiple unit process chambers for an atomic layer deposition process, upper and lower portions of the unit process chambers being able to be separated from and coupled to each other, the multiple unit process chambers being arranged in a stacking type such that each unit process chamber moves over a substrate, to which a raw material precursor is adsorbed, and causes a reaction between a reaction precursor and the raw material precursor. The device fundamentally eliminates an area of coexistence of the raw material precursor and the reaction precursor, thereby making unnecessary any additional process for removing films so as to prevent films from being deposited outside the substrate, extending the maintenance cycle, and improving thin film quality and productivity through particle generation suppression. In addition, additional functions such as heat treatment, UV treatment, plasma treatment, etc. can be selectively added to the scan-type reactor, thereby enabling formation of atomic layer thin films with various characteristics, such that various process responses are possible, films optimized for needs can be provided, and reduction of additional facilities decreases related costs and maintenance costs. |
