BOND PAD STACK FOR TRANSISTORS

摘要

In described examples, a dielectric stack is formed, including a bottom dielectric layer (211) and a top dielectric layer (212) having a contact hole (239) over a bond pad (215). An outer edge of the bottom dielectric layer (211) within the contact hole (239) extends beyond an outer edge of the top dielectric layer (212) to define an exposed bond pad area having a bond pad edge. A first metal layer (226) is deposited. A second metal layer (227) is deposited on the first metal layer (226). The second metal layer (227) is wet etched to recess it from sidewalls of the bottom dielectric layer (211) in the contact hole (239). The first metal layer (226) is wet etched to recess it from the top dielectric layer (212). The first metal layer (226) extends over the bond pad edge onto the bottom dielectric layer (211).