发明名称 |
SURFACE TREATMENT AND PASSIVATION OF AIGAN/GAN HEMT |
摘要 |
<p>In the preferred embodiments, a method to reduce gate leakage and dispersion of group III-nitride field effect devices covered with a thin in-situ SiN layer is provided. This can be obtained by introducing a second passivation layer on top of the in-situ SiN-layer, in combination with cleaning of the in-situ SiN before gate deposition and before deposition of the second passivation layer.</p> |
申请公布号 |
EP2087511(B1) |
申请公布日期 |
2015.03.18 |
申请号 |
EP20070846781 |
申请日期 |
2007.11.20 |
申请人 |
IMEC;KATHOLIEKE UNIVERSITEIT LEUVEN |
发明人 |
LORENZ, ANNE;DERLUYN, JOFF;JOHN, JOACHIM |
分类号 |
H01L21/335 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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