发明名称 READING DATA FROM A MULTI - LEVEL CELL MEMORY
摘要 <p>A method at a data storage device includes determining a first hard bit of a first logical page, the first hard bit corresponding to a particular cell of the MLC memory. A second hard bit of a second logical page is sensed. The second hard bit corresponds to the particular cell. The first hard bit is used as a soft bit of the second logical page to provide reliability information during a decode operation of the second logical page.</p>
申请公布号 EP2847767(A1) 申请公布日期 2015.03.18
申请号 EP20130723315 申请日期 2013.04.30
申请人 SANDISK TECHNOLOGIES INC. 发明人 SHARON, ERAN;ALROD, IDAN
分类号 G11C11/56;G06F11/10 主分类号 G11C11/56
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