DEVICE AND METHOD FOR SIMULTANEOUSLY PRECIPITATING A PLURALITY OF SEMICONDUCTOR LAYERS IN A PLURALITY OF PROCESS CHAMBERS

摘要

A method for depositing a semiconductor layer on a multiplicity of substrates. The process chamber height (H), which is defined by the spacing between a process chamber ceiling (8) and a process chamber floor (9) is variable and influences the growth rate of the layer. The layer thickness is measured continuously or at in short intervals on at least one substrate (5) in each process chamber (2) while the layer is growing. The process chamber height (H) is varied by means of a controller (12) and an adjusting member (6), so that layers having the same layer thickness are deposited in the process chambers.