| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a wiring structure which is capable of exhibiting excellent low contact resistance even when a barrier metal layer normally provided between a Cu alloy layer and a semiconductor layer is omitted, and has excellent adhesion to the semiconductor layer and a reduced electrical resistivity. <P>SOLUTION: The wiring structure of the present invention comprises, in order from the substrate side, a semiconductor layer and a Cu alloy layer on a substrate. The Cu alloy layer has a laminated structure comprising, in order from the substrate side, a first layer containing Mn and X (X is at least one selected from a group consisting of Ag, Au, C, W, Ca, Mg, Al, Sn, and Ni) as alloy components, and a second layer made of pure Cu or a Cu alloy which contains Cu as a main component and has an electrical resistivity lower than that of the first layer. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
