发明名称 |
Electrode material and method for manufacturing power storage device |
摘要 |
To provide a power storage device including an electrode material having a large capacity. First heat treatment is performed on a mixture of a compound containing lithium; a compound containing a metal element selected from manganese, iron, cobalt, and nickel; and a compound containing phosphorus. A cleaning step is performed on the mixture subjected to the first heat treatment. Second heat treatment is performed on the mixture subjected to the cleaning step, so that a lithium phosphate compound is produced. With the use of the lithium phosphate compound, an electrode is formed. |
申请公布号 |
US8980126(B2) |
申请公布日期 |
2015.03.17 |
申请号 |
US201113251373 |
申请日期 |
2011.10.03 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Kawakami Takahiro;Yamazaki Shunpei |
分类号 |
H01M4/88;H01M4/58;C01B25/37;C01B25/45;H01M4/38;H01M4/36 |
主分类号 |
H01M4/88 |
代理机构 |
Nixon Peabody LLP |
代理人 |
Nixon Peabody LLP ;Costellia Jeffrey L. |
主权项 |
1. A method for manufacturing a power storage device, comprising:
performing first heat treatment on a mixture of a first compound including lithium and sulfur which is a first impurity element, a second compound including phosphorus and sulfur which is a second impurity element, and a third compound including a metal element and sulfur which is a third impurity element such that the metal element is selected from manganese, iron, cobalt, and nickel; performing a cleaning step on the mixture after the first heat treatment by using an alkaline cleaning solution; performing second heat treatment on the mixture to produce a lithium phosphate compound after the cleaning step; and forming an electrode including the lithium phosphate compound, wherein a concentration of the first impurity element contained in the first compound is 1 ppm or less, wherein a concentration of the second impurity element contained in the second compound is 5 ppm or less, and wherein a concentration of the third impurity element contained in the third compound is 1.6 ppm or less. |
地址 |
Kanagawa-ken JP |