发明名称 Electrode material and method for manufacturing power storage device
摘要 To provide a power storage device including an electrode material having a large capacity. First heat treatment is performed on a mixture of a compound containing lithium; a compound containing a metal element selected from manganese, iron, cobalt, and nickel; and a compound containing phosphorus. A cleaning step is performed on the mixture subjected to the first heat treatment. Second heat treatment is performed on the mixture subjected to the cleaning step, so that a lithium phosphate compound is produced. With the use of the lithium phosphate compound, an electrode is formed.
申请公布号 US8980126(B2) 申请公布日期 2015.03.17
申请号 US201113251373 申请日期 2011.10.03
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Kawakami Takahiro;Yamazaki Shunpei
分类号 H01M4/88;H01M4/58;C01B25/37;C01B25/45;H01M4/38;H01M4/36 主分类号 H01M4/88
代理机构 Nixon Peabody LLP 代理人 Nixon Peabody LLP ;Costellia Jeffrey L.
主权项 1. A method for manufacturing a power storage device, comprising: performing first heat treatment on a mixture of a first compound including lithium and sulfur which is a first impurity element, a second compound including phosphorus and sulfur which is a second impurity element, and a third compound including a metal element and sulfur which is a third impurity element such that the metal element is selected from manganese, iron, cobalt, and nickel; performing a cleaning step on the mixture after the first heat treatment by using an alkaline cleaning solution; performing second heat treatment on the mixture to produce a lithium phosphate compound after the cleaning step; and forming an electrode including the lithium phosphate compound, wherein a concentration of the first impurity element contained in the first compound is 1 ppm or less, wherein a concentration of the second impurity element contained in the second compound is 5 ppm or less, and wherein a concentration of the third impurity element contained in the third compound is 1.6 ppm or less.
地址 Kanagawa-ken JP