| 发明名称 | Interconnect structures and methods of forming same | ||
| 摘要 | A semiconductor device, an interconnect structure, and methods of forming the same are disclosed. An embodiment is a method of forming a semiconductor device, the method including forming a first dielectric layer over a substrate, forming a first conductive layer in the first dielectric layer, and removing a first portion of the first conductive layer to form at least two conductive lines in the first dielectric layer, the at least two conductive lines being separated by a first spacing. The method further includes forming a capping layer on the at least two conductive lines, and forming an etch stop layer on the capping layer and the first dielectric layer. | ||
| 申请公布号 | US8980745(B1) | 申请公布日期 | 2015.03.17 |
| 申请号 | US201314019276 | 申请日期 | 2013.09.05 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Tung Szu-Ping;Huang Huang-Yi;Liu Wen-Jiun;Hsieh Ching-Hua;Tsai Minghsing |
| 分类号 | H01L21/44;H01L21/768;H01L23/522 | 主分类号 | H01L21/44 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method of forming a semiconductor device, the method comprising: forming a first dielectric layer over a substrate; forming a first conductive layer in the first dielectric layer; removing a first portion of the first conductive layer to form at least two conductive lines in the first dielectric layer, the at least two conductive lines being separated by a first spacing; forming a capping layer on the at least two conductive lines; and forming an etch stop layer on the capping layer and the first dielectric layer. | ||
| 地址 | Hsin-Chu TW | ||