Multilayer dielectric structures for semiconductor nano-devices

摘要

Multilayer dielectric structures are provided having silicon nitride (SiN) and silicon oxynitride (SiNO) films for use as capping layers, liners, spacer barrier layers, and etch stop layers, and other components of semiconductor nano-devices. For example, a semiconductor structure includes a multilayer dielectric structure having multiple layers of dielectric material including one or more SiN layers and one or more SiNO layers. The layers of dielectric material in the multilayer dielectric structure have a thickness in a range of about 0.5 nanometers to about 3 nanometers.

主权项

1. A semiconductor structure, comprising:
a BEOL (back end of line) interconnect structure comprising a metal line; a conformal multilayer barrier structure formed on the metal line, wherein the conformal multilayer barrier structure comprises:
a first multilayer structure comprising a plurality of stoichiometric, insulating silicon nitride (SiN) layers formed directly on the metal line, wherein each SiN layer in the first multilayer structure is in direct contact with at least one other SiN layer in the first multilayer structure; anda second multilayer structure formed directly on the first multilayer structure, wherein the second multilayer structure comprises a plurality of insulating silicon oxynitride (SiNO) layers, wherein the SiNO layers are in-situ oxidized SiN layers with a varying oxygen composition profile, wherein each SiNO layer in the second multilayer structure is in direct contact with at least one other SiNO layer in the second multilayer structure;wherein each SiN and SiNO layer in the first and second multilayer structures has a thickness of less than or equal to about 2 nanometers.