Ultra-high voltage N-type-metal-oxide-semiconductor (UHV NMOS) device and methods of manufacturing the same

摘要

An ultra-high voltage n-type-metal-oxide-semiconductor (UHV NMOS) device with improved performance and methods of manufacturing the same are provided. The UHV NMOS includes a substrate of P-type material; a first high-voltage N-well (HVNW) region disposed in a portion of the substrate; a source and bulk p-well (PW) adjacent to one side of the first HVNW region, and the source and bulk PW comprising a source and a bulk; a gate extended from the source and bulk PW to a portion of the first HVNW region, and a drain disposed within another portion of the first HVNW region that is opposite to the gate; a P-Top layer disposed within the first HVNW region, the P-Top layer positioned between the drain and the source and bulk PW; and an n-type implant layer formed on the P-Top layer.

主权项

1. A method for manufacturing ultra-high voltage n-type-metal-oxide-semiconductor (UHV NMOS) device, at least comprising:
providing a substrate of P-type material; forming a first high-voltage N-well (HVNW) region in a portion of the substrate; forming a second HVNW region in another portion of the substrate, wherein the second HVNW region is disposed at a high-side operation region of the substrate; forming at least two p-wells (PWs) separately in a region for PWs, the region for PWs adjacent to the first and second HVNW regions; forming a source and bulk p-well (PW) adjacent to one side of the first HVNW region; forming a P-Top layer within the first HVNW region; and forming an n-type implant layer on the P-Top layer.