Extremely thin semiconductor on insulator (ETSOI) logic and memory hybrid chip

摘要

A method of forming a semiconductor device that includes providing a logic device on a semiconductor on insulating layer of a transfer substrate. The transfer substrate may further include a dielectric layer and a first handle substrate. A second handle substrate may be contacted to the semiconductor on insulating layer of the transfer substrate that includes logic device. The first handle substrate may be removed to expose the dielectric layer. A memory device can then be formed on the dielectric layer. Interconnect wiring can then be formed connecting the logic device with the memory device.

主权项

1. A semiconductor device comprising:
a substrate comprised of at least a dielectric layer and an active semiconductor layer; a memory device positioned on a first side of the dielectric layer and is comprised of a floating gate layer, a control oxide layer, and a control gate layer; a logic device present on a second side of the dielectric layer and is comprised of a gate structure, a source region and a drain region, wherein the source region and the drain region of the logic device are present in the active semiconductor layer; and a read layer and a write layer on the gate structure.