Variable resistance memory device with shunt gate connected to corresponding gate

摘要

A variable resistance memory device includes a semiconductor substrate having a vertical transistor with a shunt gate that increases an area of a gate of the vertical transistor.

主权项

1. A variable resistance memory device, comprising:
a semiconductor substrate having a length and a width; a plurality of vertical transistors, extending from a surface of the semiconductor substrate in a direction perpendicular to the length and the width of the semiconductor substrate, the plurality of vertical transistors being arranged at a fixed interval on the semiconductor substrate; a variable resistive region formed on each of the plurality of vertical transistors; and a shunt gate disposed in a space between adjacent vertical transistors and configured to be electrically connected to a gate of each of the plurality of vertical transistors.