| 发明名称 | Molecular memory | ||
| 摘要 | A molecular memory device has an insulating film with a cavity, the cavity having an upper portion and a lower portion; a first conductive member with a portion exposed at the lower portion of the cavity; a second conductive member with a portion exposed at the upper portion of the cavity; and a resistance varying-type molecular chain disposed in the cavity and bonded with the first conductive member or the second conductive member. The cavity is wider than at least one of the first conductive member along a first direction and the second conductive member along a second direction. | ||
| 申请公布号 | US8981356(B2) | 申请公布日期 | 2015.03.17 |
| 申请号 | US201313785772 | 申请日期 | 2013.03.05 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Hayashi Tetsuya |
| 分类号 | H01L51/00 | 主分类号 | H01L51/00 |
| 代理机构 | Patterson & Sheridan LLP | 代理人 | Patterson & Sheridan LLP |
| 主权项 | 1. A molecular memory device, comprising: an insulating film having a plurality of cavities arranged along a first direction, the plurality of cavities including a cavity that extends along a second direction that intersects the first direction and has an upper portion and a lower portion; a first conductive member having an upper surface exposed at the lower portion of the cavity; a second conductive member having a lower surface exposed at the upper portion of the cavity; and a resistance varying-type molecular chain disposed in the cavity and bonded to either the first conductive member or the second conductive member, wherein the cavity is wider along the first direction than the second conductive member. | ||
| 地址 | Tokyo JP | ||