发明名称 |
Method for determining COP generation factors for single-crystal silicon wafer |
摘要 |
A whole determination area of a targeted wafer is concentrically divided in a radial direction, COP density is obtained in each divided determination segment, a maximum value of the COP density is set as COP densityRADIUSMAX, a minimum value of the COP density is set as COP densityRADIUSMIN, a value computed by “(COP densityRADIUSMAX−COP densityRADIUSMIN/COP densityRADIUSMAX” is compared to a predetermined set value, and a non-crystal-induced COP and a crystal-induced COP are distinguished from each other based on a clear criterion, thereby determining the COP generation factor. Therefore, a rejected wafer in which a determination of the crystal-induced COP is made despite being the non-crystal-induced COP can be relieved, so that a wafer production yield can be enhanced. |
申请公布号 |
US8978494(B2) |
申请公布日期 |
2015.03.17 |
申请号 |
US201314017649 |
申请日期 |
2013.09.04 |
申请人 |
Sumco Corporation |
发明人 |
Inami Shuichi |
分类号 |
H01L21/66;G06F19/00;C30B15/00;C30B29/06 |
主分类号 |
H01L21/66 |
代理机构 |
Clark & Brody |
代理人 |
Clark & Brody |
主权项 |
1. A method for determining a COP generation factor of a single-crystal silicon wafer comprising:
concentrically dividing a determination area of the single-crystal silicon wafer in a radial direction to form divided determination segments, determining for COPs generated in the divided determination segments, except for a central portion and an outer circumferential portion in the divided determination segments and for COPs generated in one or more of a line shape, a dot-line shape, and a dot shape locally in all of the divided determination segments that the COP generation factor is attributed to a factor except for a defect induced during crystal growth. |
地址 |
Tokyo JP |