| 摘要 |
1,193,908. Magnetic storage arrangements. INTERNATIONAL BUSINESS MACHINES CORP. 6 Nov., 1968 [14 Dec., 1967], No. 52479/68. Heading H3B. [Also in Divisions C7 and H1] A ferromagnetic film of, e.g. Fe, Ni, Co, Fe- Ni, Fe-Co, Fe-Ni-Co, rare earth metals, e.g. Gd, No, Dy and Tb, oxides, e.g. EuO, nitrides, e.g. GdN, tellurides, e.g. EuTe, or sulphides, e.g. EuS is vapour deposited in an electric field to produce uniaxial anisotropy in the plane of the film, on a quartz or glass substrate. The field is formed by applying a potential between adjacent parallel Cu, Ag or Au conductors on the substrate. An information system showing only a single circular or rectangular film 11 on a substrate 12, e.g. an electrically conductive ground plane with an insulative layer thereon, is shown in Fig. 7. A bit line 50 is deposited on the film orthogonally to the easy axis and a word line 52 is deposited parallel to the easy axis. The lines 50, 52 may be strip lines and a layer of silicon monoxide may be interposed between the lines. The line 50 can be switched at 54 to a bit driver or earth and at 56 to a load 60 which may be a sense amplifier or earth. The line 52 is connected at one end to a word driver 62 and at the other end to the characteristic impedance 64 of the line 52. The switches 54, 56 are so ganged that with one end of the line connected to the driver 58 the other end is connected to ground. Instead of using switches 54, 56 a third line similar to line 5 may be used as a sense line. The film may be used for a laser or electron beam addressable memory system, the information being retrieved by an He-Ne laser. |
