矽精制方法及矽精制装置;METHOD AND APPARATUS FOR REFINING SILICON

摘要

本发明之矽精制方法系使用至少具备填装金属矽之坩埚及电浆炬之矽精制装置，于将填装于上述坩埚中之金属矽之熔体面与自上述电浆炬喷射之电浆气体所成之角设定为20度以上且80度以下的状态下，朝向上述熔体面喷射上述电浆气体，藉此精制上述金属矽。; and refining metallic silicon by discharging a plasma gas from the plasma torch toward a molten-metal face of metallic silicon that is loaded in the crucible, in a state where the angle between the molten-metal face and the plasma gas is 20°