发明名称 PATTERN FORMATION METHOD
摘要 PROBLEM TO BE SOLVED: To achieve the formation of a pattern in a state where limitation is relieved, using a vertical cylinder phase structure formed by a microphase separation.SOLUTION: In a pattern formation method, a plasma oxidized layer 102 is formed on a surface of a substrate 101; a block copolymer thin film 103 comprising a block copolymer is formed on the plasma oxidized layer 102, the block copolymer comprising a first block chain and a second block chain having surface free energies different with each other; the block copolymer thin film 103 is heated to induce a microphase separation; a plurality of columnar phase structures 104 comprising the first block chain are formed on the block copolymer thin film 103; and the block copolymer thin film 103 is immersed into a process liquid 105 comprising an ammonium fluoride aqueous solution to form a plurality of openings 106.
申请公布号 JP2015050322(A) 申请公布日期 2015.03.16
申请号 JP20130180970 申请日期 2013.09.02
申请人 NIPPON TELEGR & TELEPH CORP <NTT>;TOKYO INSTITUTE OF TECHNOLOGY 发明人 YAMAGUCHI TORU;IYODA TOMOKAZU;NAGAI KEIJI;KOMURA MOTONORI;MURANAKA YUKA
分类号 H01L21/3065;H01L21/027;H01L21/306 主分类号 H01L21/3065
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