METHOD FOR PRODUCING SiC EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for producing an SiC epitaxial wafer, capable of producing high quality SiC epitaxial wafers with a high production efficiency.SOLUTION: A method for producing an SiC epitaxial wafer of the present invention includes the steps of: vacuum baking a coated carbon material member at a vacuum degree of 2.0×10Pa or less in a vacuum baking furnace for exclusive use; placing the coated carbon material member in an epitaxial wafer production apparatus; and disposing an SiC substrate in the epitaxial wafer production apparatus and epitaxially growing an SiC epitaxial film on the SiC substrate.