发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having more improved reliability and integration degree.SOLUTION: A semiconductor device of the present embodiment comprises: a substrate including an active region defined by an element isolation film; a gate electrode which extends in a first direction across the active region; a plurality of interconnections which extend on the gate electrode in a second direction orthogonal to the first direction; contact pads which are arranged between the gate electrode and the plurality of interconnections in spaced relation with the gate electrode and the plurality of interconnections and extend in the first direction to be overlapped with the plurality of interconnections and the active region; lower part contact plugs which electrically connect the contact pads and the active region; and upper part contact plugs which electrically connect any one of the contact pads with any one of the plurality of interconnections.</p> |
申请公布号 |
JP2015050462(A) |
申请公布日期 |
2015.03.16 |
申请号 |
JP20140175959 |
申请日期 |
2014.08.29 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
PARK JONG-KOOK;KIM HONG-SOO;JANG WON-CHUL |
分类号 |
H01L21/336;H01L21/8247;H01L27/105;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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