发明名称 CMP METHOD FOR METAL-CONTAINING SUBSTRATES
摘要 AN AQUEOUS CHEMICAL-MECHANICAL POLISHING COMPOSITION FOR POLISHING METAL CONTAINING SUBSTRATES COMPRISING AN ABRASIVE PARTICLE CONSISTING ESSENTIALLY OF A PRIMARY PARTICLE MODIFIED WITH AN ALUMINOSILICATE LAYER, AND WHEREIN THE ABRASIVE PARTICLE HAS A ZETA POTENTIAL MEASURED AT PH 2.3 OF ABOUT -5 MV TO ABOUT -100MV. THE COMPOSITION CAN BE USED TO POLISH THE SURFACE OF A TUNGSTEN CONTAINING SUBSTRATE.
申请公布号 MY153666(A) 申请公布日期 2015.03.13
申请号 MY2009PI00113 申请日期 2007.07.06
申请人 CABOT MICROELECTRONICS CORPORATIONS 发明人 VACASSY, ROBERT;ZHOU, RENJIE
分类号 C09K3/14 主分类号 C09K3/14
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