发明名称 |
CMP METHOD FOR METAL-CONTAINING SUBSTRATES |
摘要 |
AN AQUEOUS CHEMICAL-MECHANICAL POLISHING COMPOSITION FOR POLISHING METAL CONTAINING SUBSTRATES COMPRISING AN ABRASIVE PARTICLE CONSISTING ESSENTIALLY OF A PRIMARY PARTICLE MODIFIED WITH AN ALUMINOSILICATE LAYER, AND WHEREIN THE ABRASIVE PARTICLE HAS A ZETA POTENTIAL MEASURED AT PH 2.3 OF ABOUT -5 MV TO ABOUT -100MV. THE COMPOSITION CAN BE USED TO POLISH THE SURFACE OF A TUNGSTEN CONTAINING SUBSTRATE. |
申请公布号 |
MY153666(A) |
申请公布日期 |
2015.03.13 |
申请号 |
MY2009PI00113 |
申请日期 |
2007.07.06 |
申请人 |
CABOT MICROELECTRONICS CORPORATIONS |
发明人 |
VACASSY, ROBERT;ZHOU, RENJIE |
分类号 |
C09K3/14 |
主分类号 |
C09K3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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