| 发明名称 |
SEMICONDUCTOR-ON-INSULATOR DEVICE INCLUDING STAND-ALONE WELL IMPLANT TO PROVIDE JUNCTION BUTTING |
| 摘要 |
A semiconductor device includes a semiconductor-on-insulator (SOI) substrate having a bulk substrate layer, an active semiconductor layer, and a buried insulator layer interposed between the bulk substrate layer and the active semiconductor layer. A first source/drain (S/D) region includes a first stand-alone butting implant having a first butting width. A second S/D region includes a second stand-alone butting implant having a second butting width. A gate well-region is interposed between the first and second S/D regions. The gate well-region has a gate width that is greater than the first and second butting widths. |
| 申请公布号 |
US2015069513(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201314023602 |
申请日期 |
2013.09.11 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Guo Dechao;Haensch Wilfried E.;Wang Gan;Wang Xin;Wang Yanfeng;Wong Keith Kwong Hon |
| 分类号 |
H01L29/786;H01L29/78 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor-on-insulator (SOI) substrate including a bulk substrate layer, an active semiconductor layer, and a buried insulator layer interposed between the bulk substrate layer and the active semiconductor layer; a first source/drain (S/D) region including a first stand-alone butting implant formed therein, the first stand-alone butting implant having a first butting width; a second S/D region including a second stand-alone butting implant formed therein, the second stand-alone butting implant having a second butting width; and a gate well-region interposed between the first and second S/D regions, the gate well-region having a gate width that is greater than the first and second butting widths. |
| 地址 |
Armonk NY US |
