| 发明名称 |
MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE MAGNETIC MEMORY DEVICE |
| 摘要 |
According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region. |
| 申请公布号 |
US2015069552(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414200894 |
申请日期 |
2014.03.07 |
| 申请人 |
HASHIMOTO Yutaka;KAI Tadashi;NAKAYAMA Masahiko;YODA Hiroaki;NAGASE Toshihiko;YOSHIKAWA Masatoshi;SONODA Yasuyuki |
发明人 |
HASHIMOTO Yutaka;KAI Tadashi;NAKAYAMA Masahiko;YODA Hiroaki;NAGASE Toshihiko;YOSHIKAWA Masatoshi;SONODA Yasuyuki |
| 分类号 |
H01L43/02;H01L43/12 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic memory device comprising a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein
the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region. |
| 地址 |
Seoul KR |
