SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a substrate having a supporting substrate, wherein a first epitaxial layer and a second epitaxial are sequentially stacked, an isolation region including a first buried impurity region of a second conductivity type and a second buried impurity region of the second conductivity type wherein the first buried impurity region is formed from the supporting substrate to the first epitaxial layer, and the second buried impurity region is formed from the first epitaxial layer to the second epitaxial layer and is in contact with an edge of the first buried impurity region, a third buried impurity region of a first conductivity type formed from the first epitaxial layer to the second epitaxial layer, located in the second buried impurity region and overlapped with the first buried impurity region, and a transistor formed over the second epitaxial layer and overlapped with the third buried impurity region.

主权项

1. A semiconductor device, comprising:
a substrate having a supporting substrate, wherein a first epitaxial layer and a second epitaxial are sequentially stacked; an isolation region including a first buried impurity region of a second conductivity type and a second buried impurity region of the second conductivity type, wherein the first buried impurity region is formed from the supporting substrate to the first epitaxial layer, and the second buried impurity region is formed from the first epitaxial layer to the second epitaxial layer and is in contact with an edge of the first buried impurity region; a third buried impurity region of a first conductivity type formed from the first epitaxial layer to the second epitaxial layer, located in the second buried impurity region and overlapped with the first buried impurity region; and a transistor formed over the second epitaxial layer and overlapped with the third buried impurity region.