发明名称 LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
摘要 A light emitting device is provided, including a substrate and a light emitting structure on the substrate, comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first and second semiconductor layers. The substrate has at least one side surface extending outwardly. The at least one side surface includes a first portion, a transition portion connected to the first portion, and a second portion connected to the transition portion, the first portion provides a first obtuse inclination angle with reference to the bottom surface of the substrate and the transition portion provides a second obtuse inclination angle with reference to the bottom surface of the substrate, the second obtuse inclination angle is larger than the first obtuse inclination angle. The second portion includes a vertical side surface with reference to the bottom surface of the substrate.
申请公布号 US2015069325(A1) 申请公布日期 2015.03.12
申请号 US201414540881 申请日期 2014.11.13
申请人 LG INNOTEK CO., LTD. 发明人 LEE Sang Youl
分类号 H01L33/00;H01L33/12;H01L33/20;H01L33/40;H01L33/42;H01L33/06;H01L33/32 主分类号 H01L33/00
代理机构 代理人
主权项 1. A light emitting device, comprising: a substrate; and a light emitting structure on the substrate, comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first and second semiconductor layers, wherein the substrate has at least one side surface extending outwardly as the substrate extends in a direction from a bottom surface of the substrate to a top surface of the substrate, wherein the at least one side surface includes a first portion, a transition portion connected to the first portion, and a second portion connected to the transition portion, the first portion provides a first obtuse inclination angle with reference to the bottom surface of the substrate and the transition portion provides a second obtuse inclination angle with reference to the bottom surface of the substrate, the second obtuse inclination angle is larger than the first obtuse inclination angle, and wherein the second portion includes a vertical side surface with reference to the bottom surface of the substrate.
地址 Seoul KR