发明名称 METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL
摘要 [Problem] To provide a production method which enables a gallium nitride crystal to be produced under a low pressure. [Solution] A method for producing a gallium nitride crystal, said method being characterized by comprising heating metal gallium and iron nitride in a nitrogen atmosphere to at least a reaction temperature at which the metal gallium can react with the iron nitride.
申请公布号 WO2015033975(A1) 申请公布日期 2015.03.12
申请号 WO2014JP73234 申请日期 2014.09.03
申请人 DEXERIALS CORPORATION 发明人 WATANABE, MAKOTO;AKIYAMA, SHINYA;MATSUMOTO, TATSUYA
分类号 C30B29/38;C01B21/06 主分类号 C30B29/38
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