发明名称 |
METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL |
摘要 |
[Problem] To provide a production method which enables a gallium nitride crystal to be produced under a low pressure. [Solution] A method for producing a gallium nitride crystal, said method being characterized by comprising heating metal gallium and iron nitride in a nitrogen atmosphere to at least a reaction temperature at which the metal gallium can react with the iron nitride. |
申请公布号 |
WO2015033975(A1) |
申请公布日期 |
2015.03.12 |
申请号 |
WO2014JP73234 |
申请日期 |
2014.09.03 |
申请人 |
DEXERIALS CORPORATION |
发明人 |
WATANABE, MAKOTO;AKIYAMA, SHINYA;MATSUMOTO, TATSUYA |
分类号 |
C30B29/38;C01B21/06 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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