| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device which can reduce manufacturing cost and achieve a stable operation.SOLUTION: A semiconductor device comprises an active silicon layer 3 provided on a buried oxide film 2. The active silicon layer 3 has a low-voltage region 4, a high-voltage region 5 and a connection region 6. The semiconductor device comprises: trench isolation 7 for insulatively isolate the low-voltage region 4, the high-voltage region 5 and the connection region 6 from each other; a low-potential signal processing circuit 8 provided in the low-voltage region 4; a high-potential signal processing circuit 9 provided in the high-voltage region 5; and capacitances 15, 17 provided on the connection region 6, for transferring an AC signal from the low-potential signal processing circuit 8 to the high-potential signal processing circuit 9. The capacitances 15, 17 have low-potential electrodes 15a, 17a, respectively, which are connected to the low-potential signal processing circuit 8 and high-potential electrodes 15b, 17b, respectively, which are connected to the high-potential signal processing circuit 9. The low-potential electrodes 15a, 17a and the high-potential electrodes 15b, 17b each has a plurality of stacked wiring layers. Side walls of the wiring layers of both of the low-potential electrodes 15a and the high-potential electrode 15b are opposed to each other and form capacitive coupling, and side walls of the wiring layers of both of the low-potential electrode 17a and the high-potential electrode 17b are opposed to each other and form capacitive coupling. |
