| 发明名称 |
SEMICONDUCTOR STORAGE DEVICE |
| 摘要 |
A semiconductor storage device includes a first bit line and a second bit line. A nonvolatile memory element and a first cell transistor are connected in series between the first bit line and the second bit line. A sense transistor has a gate connected to a sense node which is provided between the first bit line and the memory element. A read bit line is connected to a source or a drain of the sense transistor. The read bit line is configured to transmit data of the memory element. A sense amplifier is configured to detect the logic of data transmitted from the read bit line. |
| 申请公布号 |
US2015070961(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414203458 |
申请日期 |
2014.03.10 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KATAYAMA Akira;TAKAHASHI Masahiro |
| 分类号 |
G11C11/16 |
主分类号 |
G11C11/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor storage device comprising:
a first bit line; a second bit line; a nonvolatile memory element and a first cell transistor connected in series between the first bit line and the second bit line; a sense transistor having a gate connected to a sense node which is provided between the first bit line and the memory element; a read bit line connected to a source or a drain of the sense transistor, the read bit line being configured to transmit data of the memory element; and a sense amplifier configured to detect the logic of the data transmitted from the read bit line. |
| 地址 |
Tokyo JP |
