Cup-Like Getter Scheme

摘要

The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by increasing an area in which a getter layer is deposited, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having one or more residual gases. A cavity is formed within a top surface of the substrate. The cavity has a bottom surface and sidewalls extending from the bottom surface to the top surface. A getter layer, which absorbs the one or more residual gases, is deposited over the substrate at a position extending from the bottom surface of the cavity to a location on the sidewalls. By depositing the getter layer to extend to a location on the sidewalls of the cavity, the area of the substrate that is able to absorb the one or more residual gases is increased.

主权项

1. A method of gettering, comprising:
providing a substrate into a processing chamber having one or more residual gases; forming a cavity within a top surface of the substrate, wherein the cavity comprises a bottom surface and sidewalls extending from the bottom surface to the top surface of the substrate; and depositing a getter layer, configured to absorb the one or more residual gases, over the substrate at a position extending from the bottom surface of the cavity to a location on the sidewalls.