发明名称 |
COMPOSITIONS AND PROCESSES FOR IMMERSION LITHOGRAPHY |
摘要 |
PROBLEM TO BE SOLVED: To provide new photoresist compositions that are useful for immersion lithography.SOLUTION: Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. |
申请公布号 |
JP2015045871(A) |
申请公布日期 |
2015.03.12 |
申请号 |
JP20140206589 |
申请日期 |
2014.10.07 |
申请人 |
ROHM & HAAS ELECTRONIC MATERIALS LLC |
发明人 |
WANG DEYAN |
分类号 |
G03F7/004;G03F7/039;H01L21/027 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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