METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a magnetoresistive element which allows for highly accurate etching of a storage layer, a barrier layer and a reference layer.SOLUTION: A method of manufacturing a magnetoresistive element includes a step for forming, on a substrate 11, a laminate L having a reference layer 13 including a first ferromagnetic film, a storage layer 15 including a second ferromagnetic film, and a barrier layer 14 arranged between the first ferromagnetic film and second ferromagnetic film, and composed of MgO. A mask 17M consisting of an Ru film is formed on the laminate L. The storage layer 15 is etched via the mask 17M by forming plasma of chlorine-based gas. The barrier layer 14 and reference layer 13 are etched via the mask 17M by applying a bias voltage to the substrate 11 and forming a plasma of a mixed gas of argon and a chlorine-based gas.