| 发明名称 |
METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT |
| 摘要 |
According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first non-magnetic layer on a first magnetic layer, forming a second magnetic layer on the first non-magnetic layer, forming a second non-magnetic layer on the second magnetic layer, forming a third magnetic layer on the second non-magnetic layer, patterning the third magnetic layer by a RIE using an etching gas including a noble gas and a nitrogen gas until a surface of the second non-magnetic layer is exposed, and patterning the second non-magnetic layer and the second magnetic layer after patterning of the third magnetic layer. |
| 申请公布号 |
US2015072439(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414200510 |
申请日期 |
2014.03.07 |
| 申请人 |
TOMIOKA Kazuhiro;SETO Satoshi;YOSHIKAWA Masatoshi;INADA Satoshi |
发明人 |
TOMIOKA Kazuhiro;SETO Satoshi;YOSHIKAWA Masatoshi;INADA Satoshi |
| 分类号 |
H01L43/12 |
主分类号 |
H01L43/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a magnetoresistive element, the method comprising:
forming a first non-magnetic layer on a first magnetic layer; forming a second magnetic layer on the first non-magnetic layer; forming a second non-magnetic layer on the second magnetic layer; forming a third magnetic layer on the second non-magnetic layer; patterning the third magnetic layer by a RIE using an etching gas including a noble gas and a nitrogen gas until a surface of the second non-magnetic layer is exposed; patterning the second non-magnetic layer and the second magnetic layer after patterning of the third magnetic layer; and patterning the first non-magnetic layer and the first magnetic layer after patterning the second magnetic layer. |
| 地址 |
Seoul KR |
