发明名称 DYNAMIC ELECTRODE PLASMA SYSTEM
摘要 A system for processing a substrate includes a plasma chamber to generate a plasma therein. The system also includes a process chamber to house the substrate, where the process chamber is adjacent the plasma chamber. The system also includes a rotatable extraction electrode disposed between the plasma chamber and substrate, where the rotatable extraction electrode is configured to extract an ion beam from the plasma, and configured to scan the ion beam over the substrate without movement of the substrate by rotation about an extraction electrode axis.
申请公布号 US2015069017(A1) 申请公布日期 2015.03.12
申请号 US201314020793 申请日期 2013.09.07
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Buonodono James P.
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项 1. A system for processing a substrate comprising: a plasma chamber to generate a plasma therein; a process chamber to house the substrate, the process chamber adjacent the plasma chamber; and a rotatable extraction electrode disposed between the plasma chamber and substrate, the rotatable extraction electrode configured to extract an ion beam from the plasma, and configured to scan the ion beam over the substrate without movement of the substrate by rotation about an extraction electrode axis.
地址 Gloucester MA US