SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

This SiC semiconductor device (1) comprises a SiC substrate (10), a gate-insulating film (20) that comprises SiO2 and is formed on the surface (10A) of said SiC substrate (10), and a gate electrode (30) formed on top of said gate-insulating film (20). The maximum nitrogen concentration in a region that extends 10 nm from the interface (21) between the SiC substrate (10) and the gate-insulating film (20) is at least 3×1019 cm-3, and the maximum nitrogen concentration in a region that extends 10 nm from the interface (22) between the gate-insulating film (20) and the gate electrode (30) is at most 1×1020 cm-3.