| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which can be manufactured with high productivity; and provide a manufacturing method of the silicon carbide semiconductor device.SOLUTION: A silicon carbide semiconductor device comprises: a silicon carbide semiconductor layer 12 including a principal surface 12a; and a source electrode 19 formed on the principal surface. The silicon carbide semiconductor layer includes; a body region 13 having a p-type conductivity; a source region 14 which includes the principal surface, is provided in the body region and has an n-type conductivity; and a p+ contact region 15 which includes the principal surface, is provided in the body region, and is formed adjacent to the source region. In a consideration of a first position indicating an impurity concentration of 1/10 of a maximum impurity concentration in a concentration profile of the p-type impurity in a direction perpendicular to the principal surface in the p+ contact region, and a second position indicating an impurity concentration of 1/10 of a maximum impurity concentration in a concentration profile of the n-type impurity in a direction perpendicular to the principal surface in the source region, a first depth D1 from the principal surface to the first position is shallower than a second depth D2 from the principal surface to the second position. |
