| 摘要 |
PROBLEM TO BE SOLVED: To provide a block polymer blend for lithography, which is used in nanolithography with a resolution in terms of domain size of the order of a few nm, and with which arrangement of blocks constituting copolymers at scales below 50 nm is possible.SOLUTION: A process for controlling a period characterizing the morphology obtained starting from a blend of block copolymers and of (co)polymers of one of the blocks in thin films, comprises following stages: (1) synthesizing the block copolymer so that the product of the synthesis comprises the block copolymer and the (co)polymer of one of the blocks; (2) depositing a solution of the blend of the block copolymer and of the (co)polymer on a surface; (3) evaporating the solvent; and (4) annealing. |
