p-TYPE ZnO-BASED SEMICONDUCTOR LAYER MANUFACTURING METHOD AND ZnO-BASED SEMICONDUCTOR ELEMENT MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a p-type ZnO-based semiconductor layer having a high acceptor concentration.SOLUTION: A p-type ZnO-based semiconductor layer manufacturing method comprises the steps of: (a) forming an n-type ZnO-based semiconductor single crystal structure including a group IB element which is Cu or/and Ag, and one or more group IIIB elements selected from a group consisting of B, Ga, Al and In; (b) performing first annealing on the n-type ZnO-based semiconductor single crystal structure under ordinary pressure and a first oxidizer atmosphere to form a p-type ZnO-based semiconductor layer co-doped with the group IB element and the group IIIB element; and (c) performing second annealing on the p-type ZnO-based semiconductor layer under a second oxidizer atmosphere which has an oxidizability higher than that under the ordinary pressure and the first oxidizer atmosphere to increase an acceptor concentration in the p-type ZnO-based semiconductor layer.