发明名称 SECURE SPIN TORQUE TRANSFER MAGNETIC RANDOM ACCESS MEMORY (STTMRAM)
摘要 A magnetic memory device includes a main memory made of magnetic memory, the main memory and further includes a parameter area used to store parameters used to authenticate data. Further, the magnetic memory device has parameter memory that maintains a protected zone used to store protected zone parameters, and an authentication zone used to store authentication parameters, the protection zone parameters and the authentication parameters being associated with the data that requires authentication. Upon modification of any of the parameters stored in the parameter memory by a user, a corresponding location of the parameter area of the main memory is also modified.
申请公布号 US2015074347(A1) 申请公布日期 2015.03.12
申请号 US201414542533 申请日期 2014.11.14
申请人 Nemazie Siamack;VAN LE NGON 发明人 Nemazie Siamack;VAN LE NGON
分类号 H04L29/06;G06F12/14;G11C14/00 主分类号 H04L29/06
代理机构 代理人
主权项 1. A method of writing to a magnetic memory device comprising: receiving a write command; determining that the write command is for writing to a user area; determination whether or not, the user area is write-protected and if it is, determining whether the data is in a protected zone of a main memory within the magnetic memory device and if not, completing writing to the magnetic memory device and if so, ignoring the write command by not writing to the magnetic memory.
地址 Los Altos Hills CA US