Backside Contacts for Integrated Circuit Devices

摘要

A chip includes a semiconductor substrate, a well region in the semiconductor substrate, and a transistor formed at a front side of the semiconductor substrate. A source/drain region of the transistor is disposed in the well region. A well pickup region is disposed in the well region, wherein the well pickup region is at a back side of the semiconductor substrate. A through-via penetrates through the semiconductor substrate, wherein the through-via electrically inter-couples the well pickup region and the source/drain region.

主权项

1. An integrated circuit structure comprising:
a first chip comprising:
a semiconductor substrate;a well region in the semiconductor substrate;a transistor formed at a front side of the semiconductor substrate, wherein a source/drain region of the transistor is disposed in the well region; anda well pickup region in the well region, wherein the well pickup region is at a back side of the semiconductor substrate.