| 摘要 |
A non-volatile memory device includes an isolation layer formed over a substrate to define an active region, a floating gate formed over the substrate, a selection gate formed over the substrate on one side of the floating gate and formed to be adjacent to the floating gate with a first gap from the floating gate, a control plug formed over the isolation layer on the other side of the floating gate and formed to be adjacent to the floating gate with a second gap from the floating gate, and a charge blocking layer formed to gap-fill the first gap and the second gap. |
