MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

摘要

According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.

主权项

1. A magnetoresistive element comprising:
a first magnetic layer having a variable magnetization direction; a second magnetic layer having an invariable magnetization direction and including a nonmagnetic material film and a magnetic material film; a first nonmagnetic layer arranged between the first magnetic layer and the second magnetic layer; a second nonmagnetic layer arranged on a surface of the second magnetic layer opposite to a surface on which the first nonmagnetic layer is arranged; and a third magnetic layer arranged on a surface of the second nonmagnetic layer opposite to a surface on which the second magnetic layer is arranged, wherein the second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.