| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an interfacial layer on the substrate; forming a high-k dielectric layer on the interfacial layer; forming a first bottom barrier metal (BBM) layer on the high-k dielectric layer; performing a thermal treatment; removing the first BBM layer; and forming a second BBM layer on the high-k dielectric layer. |
| 申请公布号 |
US2015069534(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201314023475 |
申请日期 |
2013.09.11 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Ke Jian-Cun;Yang Chih-Wei;Lo Kun-Yuan;Hsu Chia-Fu;Wang Shao-Wei |
| 分类号 |
H01L29/49;H01L29/51;H01L21/02;H01L21/28 |
主分类号 |
H01L29/49 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method for fabricating semiconductor device, comprising:
providing a substrate; forming an interfacial layer on the substrate; forming a high-k dielectric layer on the interfacial layer; forming a first bottom barrier metal (BBM) layer on the high-k dielectric layer; performing a thermal treatment; removing the first BBM layer; and forming a second BBM layer on the high-k dielectric layer. |
| 地址 |
Hsin-Chu City TW |
