MANUFACTURING METHOD FOR SiC EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for an SiC epitaxial wafer that reduces short carrot defects generated in an epitaxial layer.SOLUTION: A manufacturing method for an SiC epitaxial wafer includes a step S4 of supplying a first gas containing a silicon atom and a second gas containing a carbon atom to an SiC substrate to form a silicon carbide semiconductor layer by epitaxial growth on the SiC substrate, a step S5 of stopping supply of at least one of the first gas and the second gas to the SiC substrate for 20 seconds or longer and annealing the SiC substrate under a reducing gas atmosphere, and a step S6 of supplying the first gas containing a silicon atom and the second gas containing a carbon atom to the SiC substrate to form a silicon carbide semiconductor layer by epitaxial growth on the SiC substrate.