| 发明名称 |
MEMORY DEVICE WITH A COMMON SOURCE LINE MASKING CIRCUIT |
| 摘要 |
A memory device comprising a plurality of memory tiles, each tile comprising a local common source line (CSL) plate, a plurality of bitlines and a plurality of wordlines, each coupled to a plurality of memory cells and a masking circuit, coupled to each of the memory tiles, for controlling whether to raise the local CSL plate and the plurality of bitlines based on the a global common source line. |
| 申请公布号 |
US2015071010(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414186636 |
申请日期 |
2014.02.21 |
| 申请人 |
Sony Corporation |
发明人 |
Kitagawa Makoto;Javanifard Jahanshir |
| 分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device comprising:
a plurality of memory tiles, each tile comprising a local common source line (CSL) plate, a plurality of bitlines and a plurality of wordlines, each coupled to a plurality of memory cells; and a masking circuit, coupled to each of the memory tiles, for controlling whether to raise the local CSL plate and the plurality of bitlines based on a global common source line. |
| 地址 |
Tokyo JP |
