发明名称 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 The present invention relates to a substrate processing method for suppressing local temperature changes in a substrate regarding the beginning of supplying process liquid, and to a substrate processing apparatus. The substrate processing method of the present invention comprises: a SPM supply process of supplying high-temperature SPM to an upper surface of a substrate; a DIW supply process of washing off remaining liquid on the substrate by supplying room-temperature DIW to the upper surface of the substrate after the SPM supply process; a hydrogen peroxide supply process of supplying hydrogen peroxide of which the liquid temperature is lower than that of the SPM and higher than room temperature to the upper surface of the substrate while the SPM remains on the substrate after the SPM supply process and before the DIW supply process as well; and a temperature drop suppression process of supplying high-temperature pure water to a bottom surface of the substrate while proceeding the hydrogen peroxide supply process.
申请公布号 KR20150026964(A) 申请公布日期 2015.03.11
申请号 KR20140114067 申请日期 2014.08.29
申请人 DAINIPPON SCREEN MFG. CO., LTD. 发明人 NEGORO SEI;MURAMOTO RYO;NAGAI YASUHIKO;OSUKA TSUTOMU;IWATA KEIJI
分类号 H01L21/02;H01L21/302;H01L21/683 主分类号 H01L21/02
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