发明名称 圧電デバイスおよびその製造方法
摘要 <P>PROBLEM TO BE SOLVED: To provide a piezo-electric device formed by bonding a silicon substrate and a piezoelectric body and a method of fabricating the piezo-electric device. <P>SOLUTION: A method includes heating a surface of a silicon substrate 1, forming a thermal oxide film 1d on a surface of a supporting layer 1a on an opposite side from an insulating oxide film layer 1b, and forming a thermal oxide film 1e on a surface of an active layer 1c on an opposite side from the insulating oxide film layer 1b. An adhesion layer 4 for tightly adhering a bonding layer is formed on a SOI substrate 1. A chip-shaped piezoelectric body 2 in which electrode layers 2b1 and 2b2 are sequentially formed on each side of a piezoelectric material 2a formed from PZT is disposed on the adhesion layer 4 through a soldering material 3a<SB POS="POST">1</SB>as a metal paste. Then, the bonding layer is formed by baking the soldering material 3a<SB POS="POST">1</SB>to be hardened, and the SOI substrate 1 and the piezoelectric body 2 are bonded by the bonding layer. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP5682216(B2) 申请公布日期 2015.03.11
申请号 JP20100229218 申请日期 2010.10.12
申请人 发明人
分类号 H01L41/08;H01L41/09;B81B3/00;B81C3/00;H01L41/18;H01L41/22;H01L41/311;H01L41/313;H01L41/332;H01L41/39 主分类号 H01L41/08
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