| 摘要 |
<p>Electric field concentration can be easily generated in a residue part by a variation current in the high frequency switching operation of SBD, by an etching residue of a sharp end existing on the edge of a Schottky electrode. The present invention includes a drift layer (1b) of a first conductivity; a guard ring region (2) of a second conductivity in the drift layer (1b); a field insulating layer (3) that is formed to surround the guard ring region (2); a Schottky electrode (4) that is formed to cover the guard ring region (2) and the drift layer (1b) exposed to a surface in the guard ring (2), and wherein the edge thereof exists on the field insulating layer (3); and a surface electrode pad (5) formed on the Schottky electrode (4), wherein an edge of the surface electrode pad (5) passes the edge the Schottky electrode (4) and contacts the field insulating layer (3).</p> |
