发明名称 INFRARED DETECTOR
摘要 <p>Provided is an infrared detector which has a simple composition, has a high amplification factor, and is operated by a low voltage. An NMOS transistor, which is an output end of a pyroelectric infrared detection device, is formed with a source ground amplification circuit connected to a GND by a capacity and resistance in a parallel connection of a source.</p>
申请公布号 KR20150026892(A) 申请公布日期 2015.03.11
申请号 KR20140111709 申请日期 2014.08.26
申请人 SEIKO INSTRU KABUSHIKI KAISHA, ALSO TRADING AS SEIKO INSTRUMENTS INC. 发明人 UTSUNOMIYA FUMIYASU
分类号 G01J1/02 主分类号 G01J1/02
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