SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a semiconductor device and a method of fabricating the same. The semiconductor device according to the present invention includes: a plurality of pattern structures that are spaced apart from one another on a support layer in a first direction and extend in a second direction perpendicular to the first direction, wherein an upper width of the pattern structures in the first direction is smaller than a lower width of the pattern structures; a plurality of extension patterns that extend on two sidewalls of each of the plurality of pattern structures in the second direction, wherein an upper width of the extension patterns in the first direction is greater than a lower width of the extension patterns; a plurality of contact patterns that are spaced apart from one another on the support layer in the first direction and the second direction between the pattern structures and the extension patterns; and a plurality of conductive patterns on upper and lateral surfaces of the pattern structures and the extension patterns, and electrically connected to the contact patterns.