| 摘要 |
<p>A slurry composition of the present invention comprises 0.1-10 wt% of abrasives, 0.01-1 wt% of isothiazole based distribution and stabilization agents, 0.01-1 wt% of benzene carboxylic acid based anticorrosive agents, 0.01-15 wt% of amino acid based chelating agents and 0.01-1 wt% of complexing agents consisting of acryl amide and aminomethyl propanol. The slurry composition of the present invention prevents defects on a surface to be polished by maximizing a selective remove rate between Cu and Ta and a stable Cu remove rate while minimizing erosion and dishing during a high speed CMP process as compared with an existing slurry for polishing.</p> |
